sot23 pnp silicon planar high voltage transistor issue 3 ? january 1996 features * excellent h fe characteristics at i c =100ma * low saturation voltages complementary type ? fmmt458 partmarking detail ? 558 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -5 v peak pulse current i cm -500 ma continuous collector current i c -150 ma base current i b -200 ma power dissipation p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -400 v i c =-100 m a collector-emitter breakdown voltage v br(ceo) -400 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo ; i ces -100 na v cb =-320v; v ce =320v emitter cut-off current i ebo -100 na v eb =-4v collector-emitter saturation voltage v ce(sat) -0.2 -0.5 v v i c =-20ma, i b =-2ma * i c =-50ma, i b =-6ma * base-emitter saturation voltage v be(sat) -0.9 v i c =-50ma, i b =-5ma * base-emitter turn on voltage v be(on) -0.9 v i c =-50ma, v ce =-10v * static forward current transfer ratio h fe 100 100 15 300 i c =-1ma, v ce =-10v i c =-50ma, v ce =-10v * i c =-100ma, v ce =-10v* transition frequency f t 50 mhz i c =-10ma, v ce =-20v f=20mhz collector-base breakdown voltage c obo 5pfv cb =-20v, f=1mhz switching times t on t off 95 1600 ns ns i c =-50ma, v ce =-100v i b1 =5ma, i b2 =-10ma * measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMT558 3 - 134 c b e 3 - 133 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (vol ts) v ce(sat) v i c i c - collector current (amps) v - (vol ts) -55c +25c +100c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - no rm al i sed gai n v - (vol ts) v - (vol ts ) i c /i b =10 i c /i b =50 i c /i b =10 i c /i b =10 v ce =10v v ce =10v 300 200 100 h - t ypical gain 0.001 0.001 0.001 0.001 0.001 i c /i b =20 -55c +25c +100c +175c 1 0.1 safe operating area v ce - collector emitter voltage (v) 10v 100v 1s dc 100ms 10ms 100 m s 1ms 1v 0.01 1000v 0.001 FMMT558
sot23 pnp silicon planar high voltage transistor issue 3 ? january 1996 features * excellent h fe characteristics at i c =100ma * low saturation voltages complementary type ? fmmt458 partmarking detail ? 558 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -5 v peak pulse current i cm -500 ma continuous collector current i c -150 ma base current i b -200 ma power dissipation p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -400 v i c =-100 m a collector-emitter breakdown voltage v br(ceo) -400 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo ; i ces -100 na v cb =-320v; v ce =320v emitter cut-off current i ebo -100 na v eb =-4v collector-emitter saturation voltage v ce(sat) -0.2 -0.5 v v i c =-20ma, i b =-2ma * i c =-50ma, i b =-6ma * base-emitter saturation voltage v be(sat) -0.9 v i c =-50ma, i b =-5ma * base-emitter turn on voltage v be(on) -0.9 v i c =-50ma, v ce =-10v * static forward current transfer ratio h fe 100 100 15 300 i c =-1ma, v ce =-10v i c =-50ma, v ce =-10v * i c =-100ma, v ce =-10v* transition frequency f t 50 mhz i c =-10ma, v ce =-20v f=20mhz collector-base breakdown voltage c obo 5pfv cb =-20v, f=1mhz switching times t on t off 95 1600 ns ns i c =-50ma, v ce =-100v i b1 =5ma, i b2 =-10ma * measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device FMMT558 3 - 134 c b e 3 - 133 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 110 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 20 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics v ce(sat) v i c i c - collector current (amps) v - (vol ts) v ce(sat) v i c i c - collector current (amps) v - (vol ts) -55c +25c +100c +175c i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h - no rm al i sed gai n v - (vol ts) v - (vol ts ) i c /i b =10 i c /i b =50 i c /i b =10 i c /i b =10 v ce =10v v ce =10v 300 200 100 h - t ypical gain 0.001 0.001 0.001 0.001 0.001 i c /i b =20 -55c +25c +100c +175c 1 0.1 safe operating area v ce - collector emitter voltage (v) 10v 100v 1s dc 100ms 10ms 100 m s 1ms 1v 0.01 1000v 0.001 FMMT558
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